hailing cheng two dimensional electron transport in gan gaas based heterostructures

Недавно искали

Диапазон цен



Vincent Consonni Wide Band Gap Semiconductor Nanowires 2. Heterostructures and Optoelectronic Devices

This book, the second of two volumes, describes heterostructures and optoelectronic devices made from GaN and ZnO nanowires. Over the last decade, the number of publications on GaN and ZnO nanowires has grown exponentially, in particular for their potential optical applications in LEDs, lasers, UV detectors or solar cells. So far, such applications are still in their infancy, which we analyze as being mostly due to a lack of understanding and control of the growth of nanowires and related heterostructures. Furthermore, dealing with two different but related semiconductors such as ZnO and GaN, but also with different chemical and physical synthesis methods, will bring valuable comparisons in order to gain a general approach for the growth of wide band gap nanowires applied to optical devices

10510.27 рублей

Купить сейчас

Hideaki Tsuchiya Carrier Transport in Nanoscale MOS Transistors

A comprehensive advanced level examination of the transport theory of nanoscale devices Provides advanced level material of electron transport in nanoscale devices from basic principles of quantum mechanics through to advanced theory and various numerical techniques for electron transport Combines several up-to-date theoretical and numerical approaches in a unified manner, such as Wigner-Boltzmann equation, the recent progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations The authors approach the subject in a logical and systematic way, reflecting their extensive teaching and research backgrounds

9423.69 рублей

Купить сейчас

Alberto Pistocchi GIS Based Chemical Fate Modeling. Principles and Applications

Explains how GIS enhances the development of chemical fate and transport models Over the past decade, researchers have discovered that geographic information systems (GIS) are not only excellent tools for managing and displaying maps, but also useful in the analysis of chemical fate and transport in the environment. Among its many benefits, GIS facilitates the identification of critical factors that drive chemical fate and transport. Moreover, GIS makes it easier to communicate and explain key model assumptions. Based on the author's firsthand experience in environmental assessment, GIS Based Chemical Fate Modeling explores both GIS and chemical fate and transport modeling fundamentals, creating an interface between the two domains. It then explains how GIS analytical functions enable scientists to develop simple, yet comprehensive spatially explicit chemical fate and transport models that support real-world applications. In addition, the book features: Practical examples of GIS based model calculations that serve as templates for the development of new applications Exercises enabling readers to create their own GIS based models Accompanying website featuring downloadable datasets used in the book's examples and exercises References to the literature, websites, data repositories, and online reports to facilitate further research Coverage of important topics such as spatial decision support systems and multi-criteria analysis as well as ecological and human health risk assessment in a spatial context GIS Based Chemical Fate Modeling makes a unique contribution to the environmental sciences by explaining how GIS analytical functions enhance the development and interpretation of chemical fate and transport models. Environmental scientists should turn to this book to gain a deeper understanding of the role of GIS in describing what happens to chemicals when they are released into the environment.

12179.28 рублей

Купить сейчас

Ernesto Exposito Advanced Transport Protocols. Designing the Next Generation

The current diversity of transport services, as well as the complexity resulting from the deployment of specific transport protocols or mechanisms over the different services provided by heterogeneous networks, demand a novel design of the transport layer. Moreover, current and future applications will only be able to take advantage of the most adapted and available transport services if they are able to interact (i.e. discover, compose, deploy and adapt) efficiently with this advanced transport layer. The work presented in this book proposes a model-driven methodology and a service-oriented approach aimed at designing the mechanisms, functions, protocols and services of the next generation transport layer. The first part of this book presents the state of the art of transport protocols and introduces a model-driven methodology and an ontology semantic model implementation aimed at designing next generation transport protocols. The second part presents the UML-based design of a component-based transport protocol. An extension to this protocol based on service-component and service-oriented architectures is also presented. The third part presents various model-driven adaptive strategies aimed at managing the behavioral and structural adaptation of next generation autonomic transport protocols. The fourth and final part presents the design of a transport layer based on component-oriented and service-oriented approaches and integrating the autonomic computing paradigm guided by the semantic dimension provided by ontologies.

11594.1 рублей

Купить сейчас

Kevin Jensen L. Introduction to the Physics of Electron Emission

A practical, in-depth description of the physics behind electron emission physics and its usage in science and technology Electron emission is both a fundamental phenomenon and an enabling component that lies at the very heart of modern science and technology. Written by a recognized authority in the field, with expertise in both electron emission physics and electron beam physics, An Introduction to Electron Emission provides an in-depth look at the physics behind thermal, field, photo, and secondary electron emission mechanisms, how that physics affects the beams that result through space charge and emittance growth, and explores the physics behind their utilization in an array of applications. The book addresses mathematical and numerical methods underlying electron emission, describing where the equations originated, how they are related, and how they may be correctly used to model actual sources for devices using electron beams. Writing for the beam physics and solid state communities, the author explores applications of electron emission methodology to solid state, statistical, and quantum mechanical ideas and concepts related to simulations of electron beams to condensed matter, solid state and fabrication communities. Provides an extensive description of the physics behind four electron emission mechanisms—field, photo, and secondary, and how that physics relates to factors such as space charge and emittance that affect electron beams. Introduces readers to mathematical and numerical methods, their origins, and how they may be correctly used to model actual sources for devices using electron beams Demonstrates applications of electron methodology as well as quantum mechanical concepts related to simulations of electron beams to solid state design and manufacture Designed to function as both a graduate-level text and a reference for research professionals Introduction to the Physics of Electron Emission is a valuable learning tool for postgraduates studying quantum mechanics, statistical mechanics, solid state physics, electron transport, and beam physics. It is also an indispensable resource for academic researchers and professionals who use electron sources, model electron emission, develop cathode technologies, or utilize electron beams.

10147.85 рублей

Купить сейчас

Dollfus Philippe The Wigner Monte-Carlo Method for Nanoelectronic Devices. A Particle Description of Quantum Transport and Decoherence

This book gives an overview of the quantum transport approaches for nanodevices and focuses on the Wigner formalism. It details the implementation of a particle-based Monte Carlo solution of the Wigner transport equation and how the technique is applied to typical devices exhibiting quantum phenomena, such as the resonant tunnelling diode, the ultra-short silicon MOSFET and the carbon nanotube transistor. In the final part, decoherence theory is used to explain the emergence of the semi-classical transport in nanodevices.

9365.75 рублей

Купить сейчас

Alex Lidow GaN Transistors for Efficient Power Conversion

Gallium nitride (GaN) is an emerging technology that promises to displace silicon MOSFETs in the next generation of power transistors. As silicon approaches its performance limits, GaN devices offer superior conductivity and switching characteristics, allowing designers to greatly reduce system power losses, size, weight, and cost. This timely second edition has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. With higher-frequency switching capabilities, GaN devices offer the chance to increase efficiency in existing applications such as DC–DC conversion, while opening possibilities for new applications including wireless power transfer and envelope tracking. This book is an essential learning tool and reference guide to enable power conversion engineers to design energy-efficient, smaller and more cost-effective products using GaN transistors. Key features: Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications. Contains useful discussions on device–circuit interactions, which are highly valuable since the new and high performance GaN power transistors require thoughtfully designed drive/control circuits in order to fully achieve their performance potential. Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors – see companion website for further details. A valuable learning resource for professional engineers and systems designers needing to fully understand new devices as well as electrical engineering students.

8988.37 рублей

Купить сейчас

Er-Ping Li Electrical Modeling and Design for 3D System Integration. 3D Integrated Circuits and Packaging, Signal Integrity, Power Integrity and EMC

New advanced modeling methods for simulating the electromagnetic properties of complex three-dimensional electronic systems Based on the author's extensive research, this book sets forth tested and proven electromagnetic modeling and simulation methods for analyzing signal and power integrity as well as electromagnetic interference in large complex electronic interconnects, multilayered package structures, integrated circuits, and printed circuit boards. Readers will discover the state of the technology in electronic package integration and printed circuit board simulation and modeling. In addition to popular full-wave electromagnetic computational methods, the book presents new, more sophisticated modeling methods, offering readers the most advanced tools for analyzing and designing large complex electronic structures. Electrical Modeling and Design for 3D System Integration begins with a comprehensive review of current modeling and simulation methods for signal integrity, power integrity, and electromagnetic compatibility. Next, the book guides readers through: The macromodeling technique used in the electrical and electromagnetic modeling and simulation of complex interconnects in three-dimensional integrated systems The semi-analytical scattering matrix method based on the N-body scattering theory for modeling of three-dimensional electronic package and multilayered printed circuit boards with multiple vias Two- and three-dimensional integral equation methods for the analysis of power distribution networks in three-dimensional package integrations The physics-based algorithm for extracting the equivalent circuit of a complex power distribution network in three-dimensional integrated systems and printed circuit boards An equivalent circuit model of through-silicon vias Metal-oxide-semiconductor capacitance effects of through-silicon vias Engineers, researchers, and students can turn to this book for the latest techniques and methods for the electrical modeling and design of electronic packaging, three-dimensional electronic integration, integrated circuits, and printed circuit boards.

9670.33 рублей

Купить сейчас

Rik Brydson Aberration-Corrected Analytical Transmission Electron Microscopy

The book is concerned with the theory, background, and practical use of transmission electron microscopes with lens correctors that can correct the effects of spherical aberration. The book also covers a comparison with aberration correction in the TEM and applications of analytical aberration corrected STEM in materials science and biology. This book is essential for microscopists involved in nanoscale and materials microanalysis especially those using scanning transmission electron microscopy, and related analytical techniques such as electron diffraction x-ray spectrometry (EDXS) and electron energy loss spectroscopy (EELS).

5786.97 рублей

Купить сейчас

Hans Hartnagel Vacuum Nanoelectronic Devices. Novel Electron Sources and Applications

Introducing up-to-date coverage of research in electron field emission from nanostructures, Vacuum Nanoelectronic Devices outlines the physics of quantum nanostructures, basic principles of electron field emission, and vacuum nanoelectronic devices operation, and offers as insight state-of-the-art and future researches and developments. This book also evaluates the results of research and development of novel quantum electron sources that will determine the future development of vacuum nanoelectronics. Further to this, the influence of quantum mechanical effects on high frequency vacuum nanoelectronic devices is also assessed. Key features: • In-depth description and analysis of the fundamentals of Quantum Electron effects in novel electron sources. • Comprehensive and up-to-date summary of the physics and technologies for THz sources for students of physical and engineering specialties and electronics engineers. • Unique coverage of quantum physical results for electron-field emission and novel electron sources with quantum effects, relevant for many applications such as electron microscopy, electron lithography, imaging and communication systems and signal processing. • New approaches for realization of electron sources with required and optimal parameters in electronic devices such as vacuum micro and nanoelectronics. This is an essential reference for researchers working in terahertz technology wanting to expand their knowledge of electron beam generation in vacuum and electron source quantum concepts. It is also valuable to advanced students in electronics engineering and physics who want to deepen their understanding of this topic. Ultimately, the progress of the quantum nanostructure theory and technology will promote the progress and development of electron sources as main part of vacuum macro-, micro- and nanoelectronics.

10872.7 рублей

Купить сейчас

Vincent Consonni Wide Band Gap Semiconductor Nanowires for Optical Devices. Low-Dimensionality Related Effects and Growth

GaN and ZnO nanowires can by grown using a wide variety of methods from physical vapor deposition to wet chemistry for optical devices. This book starts by presenting the similarities and differences between GaN and ZnO materials, as well as the assets and current limitations of nanowires for their use in optical devices, including feasibility and perspectives. It then focuses on the nucleation and growth mechanisms of ZnO and GaN nanowires, grown by various chemical and physical methods. Finally, it describes the formation of nanowire heterostructures applied to optical devices.

12757.71 рублей

Купить сейчас

Eddy van der Maarel Modelling Transport

Already the market leader in the field, Modelling Transport has become still more indispensible following a thorough and detailed update. Enhancements include two entirely new chapters on modelling for private sector projects and on activity-based modelling; a new section on dynamic assignment and micro-simulation; and sizeable updates to sections on disaggregate modelling and stated preference design and analysis. It also tackles topical issues such as valuation of externalities and the role of GPS in travel time surveys. Providing unrivalled depth and breadth of coverage, each topic is approached as a modelling exercise with discussion of the roles of theory, data, model specification, estimation, validation and application. The authors present the state of the art and its practical application in a pedagogic manner, easily understandable to both students and practitioners. Follows on from the highly successful third edition universally acknowledged as the leading text on transport modelling techniques and applications Includes two new chapters on modelling for private sector projects and activity based modeling, and numerous updates to existing chapters Incorporates treatment of recent issues and concerns like risk analysis and the dynamic interaction between land use and transport Provides comprehensive and rigorous information and guidance, enabling readers to make practical use of every available technique Relates the topics to new external factors and technologies such as global warming, valuation of externalities and global positioning systems (GPS).

6700.7 рублей

Купить сейчас

Alain Claverie Transmission Electron Microscopy in Micro-nanoelectronics

Today, the availability of bright and highly coherent electron sources and sensitive detectors has radically changed the type and quality of the information which can be obtained by transmission electron microscopy (TEM). TEMs are now present in large numbers not only in academia, but also in industrial research centers and fabs. This book presents in a simple and practical way the new quantitative techniques based on TEM which have recently been invented or developed to address most of the main challenging issues scientists and process engineers have to face to develop or optimize semiconductor layers and devices. Several of these techniques are based on electron holography; others take advantage of the possibility of focusing intense beams within nanoprobes. Strain measurements and mappings, dopant activation and segregation, interfacial reactions at the nanoscale, defect identification and specimen preparation by FIB are among the topics presented in this book. After a brief presentation of the underlying theory, each technique is illustrated through examples from the lab or fab.

12179.28 рублей

Купить сейчас

N. Sukumar A Matter of Density. Exploring the Electron Density Concept in the Chemical, Biological, and Materials Sciences

The origins and significance of electron density in the chemical, biological, and materials sciences Electron density is one of the fundamental concepts underlying modern chemistry and one of the key determinants of molecular structure and stability. It is also the basic variable of density functional theory, which has made possible, in recent years, the application of the mathematical theory of quantum physics to chemical and biological systems. With an equal emphasis on computational and philosophical questions, A Matter of Density: Exploring the Electron Density Concept in the Chemical, Biological, and Materials Sciences addresses the foundations, analysis, and applications of this pivotal chemical concept. The first part of the book presents a coherent and logically connected treatment of the theoretical foundations of the electron density concept. Discussion includes the use of probabilities in statistical physics; the origins of quantum mechanics; the philosophical questions at the heart of quantum theory, like quantum entanglement; and methods for the experimental determination of electron density distributions. The remainder of the book deals with applications of the electron density concept in the chemical, biological, and materials sciences. Contributors offer insights on how a deep understanding of the origins of chemical reactivity can be gleaned from the concepts of density functional theory. Also discussed are the applications of electron density in molecular similarity analysis and electron density-derived molecular descriptors, such as electrostatic potentials and local ionization energies. This section concludes with some applications of modern density functional theory to surfaces and interfaces. An essential reference for students as well as quantum and computational chemists, physical chemists, and physicists, this book offers an unparalleled look at the development of the concept of electron density from its inception to its role in density functional theory, which led to the 1998 Nobel Prize in Chemistry.

9930.53 рублей

Купить сейчас

Valerio Magnasco Models for Bonding in Chemistry

A readable little book assisting the student in understanding, in a nonmathematical way, the essentials of the different bonds occurring in chemistry. Starting with a short, self-contained,introduction, Chapter 1 presents the essential elements of the variation approach to either total or second-order molecular energies, the system of atomic units (au) necessary to simplify all mathematical expressions, and an introductory description of the electron distribution in molecules. Using mostly 2x2 Hückel secular equations, Chapter 2, by far the largest part of the book because of the many implications of the chemical bond, introduces a model of bonding in homonuclear and heteronuclear diatomics, multiple and delocalized bonds in hydrocarbons, and the stereochemistry of chemical bonds in polyatomic molecules, in a word, a model of the strong first-order interactions originating the chemical bond. In Chapter 3 the Hückel model of the linear polyene chain is used to explain the origin of band structure in the 1-dimensional crystal. Chapter 4 deals with a simple two-state model of weak interactions, introducing the reader to understand second-order electric properties of molecules and VdW bonding between closed shells. Lastly, Chapter 5 studies the structure of H-bonded dimers and the nature of the hydrogen bond, which has a strength intermediate between a VdW bond and a weak chemical bond. Besides a qualitative MO approach based on HOMO-LUMO charge transfer from an electron donor to an electron acceptor molecule, a quantitative electrostatic approach is presented yielding an electrostatic model working even at its simplest pictorial level. A list of alphabetically ordered references, author and subject indices complete the book.

12563.81 рублей

Купить сейчас

Yang Leng Materials Characterization. Introduction to Microscopic and Spectroscopic Methods

Now in its second edition, this continues to serve as an ideal textbook for introductory courses on materials characterization, based on the author's experience in teaching advanced undergraduate and postgraduate university students. The new edition retains the successful didactical concept of introductions at the beginning of chapters, exercise questions and an online solution manual. In addition, all the sections have been thoroughly revised, updated and expanded, with two major new topics (electron backscattering diffraction and environmental scanning electron microscopy), as well as fifty additional questions – in total about 20% new content. The first part covers commonly used methods for microstructure analysis, including light microscopy, X-ray diffraction, transmission and scanning electron microscopy, as well as scanning probe microscopy. The second part of the book is concerned with techniques for chemical analysis and introduces X-ray energy dispersive spectroscopy, fluorescence X-ray spectroscopy and such popular surface analysis techniques as photoelectron and secondary ion mass spectroscopy. This section concludes with the two most important vibrational spectroscopies (infra-red and Raman) and the increasingly important thermal analysis. The theoretical concepts are discussed with a minimal involvement of mathematics and physics, and the technical aspects are presented with the actual measurement practice in mind. Making for an easy-to-read text, the book never loses sight of its intended audience.

9822.62 рублей

Купить сейчас

A practical, in-depth description of the physics behind electron emission physics and its usage in science and technology Electron emission is both a fundamental phenomenon and an enabling component that lies at the very heart of modern science and technology. Written by a recognized authority in the field, with expertise in both electron emission physics and electron beam physics, An Introduction to Electron Emission provides an in-depth look at the physics behind thermal, field, photo, and secondary electron emission mechanisms, how that physics affects the beams that result through space charge and emittance growth, and explores the physics behind their utilization in an array of applications. The book addresses mathematical and numerical methods underlying electron emission, describing where the equations originated, how they are related, and how they may be correctly used to model actual sources for devices using electron beams. Writing for the beam physics and solid state communities, the author explores applications of electron emission methodology to solid state, statistical, and quantum mechanical ideas and concepts related to simulations of electron beams to condensed matter, solid state and fabrication communities. Provides an extensive description of the physics behind four electron emission mechanisms—field, photo, and secondary, and how that physics relates to factors such as space charge and emittance that affect electron beams. Introduces readers to mathematical and numerical methods, their origins, and how they may be correctly used to model actual sources for devices using electron beams Demonstrates applications of electron methodology as well as quantum mechanical concepts related to simulations of electron beams to solid state design and manufacture Designed to function as both a graduate-level text and a reference for research professionals Introduction to the Physics of Electron Emission is a valuable learning tool for postgraduates studying quantum mechanics, statistical mechanics, solid state physics, electron transport, and beam physics. It is also an indispensable resource for academic researchers and professionals who use electron sources, model electron emission, develop cathode technologies, or utilize electron beams.

Каталог mededu51.ru поможет купить hailing cheng two dimensional electron transport in gan gaas based heterostructures, перво-наперво проверив наилучшую стоимость. Цена hailing cheng two dimensional electron transport in gan gaas based heterostructures начинается с 825.49 рублей и достигает значения 12757.71 руб. Этот товар есть возможность прикупить аж в 2 хороших торговых центрах СНГ, среди которых litres.ru, aliexpress.ru. На начало 2020 допустимая стоимость hailing cheng two dimensional electron transport in gan gaas based heterostructures в РФ составляет 8698.7 руб. Отзывы про hailing cheng two dimensional electron transport in gan gaas based heterostructures довольно положительные и фирму восхваляют своим друзьям почти все покупатели портала.

© 2020 Mededu51 . Охраняется законом РФ о СМИ | Разработано студией Flexi